| PART |
Description |
Maker |
| MPS6651 MPS6601 MPS6602 MPS6652 ON2329 |
Amplifier Transistors 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
(MPS6602) Amplifier Transistors
Voltage and current are negative for PNP transistors
From old datasheet system
|
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| DTA114EM3T5G DTA144WM3T5G DTA114TM3T5G DTA114YM3T5 |
Digital Transistors (BRT)(数字晶体管（BRT 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Digital Transistors(BRT)
Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
| BC847BPDW1T1 BC847CPDW1T1 BC848BPDW1T1 BC846BPDW1T |
Dual General Purpose Amplifier Transistors (NPN PNP)(-45V通用型双放大器晶体管(NPN PNP，SOT-363封装)) 100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
Dual General Purpose Transistors(NPN/PNP Duals)
|
ON Semiconductor
|
| PDTA123E PDTA123EE PDTA123EEF PDTA123EK PDTA123EU |
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP resistor-equipped transistors; R1 = 2.2 k楼?, R2 = 2.2 k楼?
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
|
NXP Semiconductors
|
| PDTA115ES PDTA115E PDTC115EU PDTA115EE PDTA115EEF |
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT416 (SC-75); Container: Tape reel smd
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
PDTA115E series; PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT883 (SC-101); Container: Tape reel smd
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BC327-16 BC327 BC327-25 BC328-25 BC328 BC328-16 |
Amplifier Transistors(PNP Silicon)
Amplifier Transistors(PNP)
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
|
MOTOROLA INC
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| ZXT10P40DE6 ZXT10P40DE6TA ZXT10P40DE6TC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
PNP Low Sat Transistor
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| 2SA2040 2SC5707 C5707 2SA2040TP 2SA2040TP-FA 2SC57 |
PNP Epitaxial Planar Silicon Transistors High Current Switching Applications
PNP / NPN Epitaxial Planar Silicon Transistors
PNP/NPN Epitaxial Planar Silicon Transistors
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 8A I(C) | TO-251VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 8A I(C) | TO-252VAR
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
|
SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
|
| PDTA144E PDTA144EE PDTA144EU PDTA144EU115 PDTA144E |
PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=47千欧姆，R2=47千欧
PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
PNP resistor-equipped transistors; R1 = 47 k惟, R2 = 47 k惟
|
NXP Semiconductors N.V.
|
| PDTA114YEF PDTA114YT PDTA114YM |
PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=10千欧姆，R2=47千欧
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
PNP resistor-equipped transistors; R1 = 10 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| MPS6507_D MPS750 ON2326 MPS650 MPS751 MPS651 |
(MPS650) Amplifier Transistors
(MPS750) Amplifier Transistors
From old datasheet system
Voltage and current are negative for PNP transistors
|
Motorola, Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
|
